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參數(shù)資料
| 型號(hào)： | BC850W |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | BC850W |
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V; see Figs 2 and 3
15
5
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC849BW; BC850BW
BC849CW; BC850CW
collector-emitter saturation
voltage
200
420
580
100
11
450
800
250
600
700
770
3
4
V
CEsat
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 10 Hz to 15.7 kHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
pF
pF
MHz
dB
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
4
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC849 | NPN general purpose transistor |
| BC850 | NPN general purpose transistors |
| BC850 | SOT23 NPN SILICON PLANAR |
| BC850B-2FZ | SOT23 NPN SILICON PLANAR |
| BC850C-Z2G | SOT23 NPN SILICON PLANAR |
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