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參數(shù)資料
| 型號(hào)： | BC849B |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 |
| 中文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | BC849B |
Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC849B,C
1
2
1
2
3
3
SOT-23
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
30
30
5.0
100
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
o
C
C
P
D
225
1.8
556
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C
C
P
D
300
2.4
417
mW
mW /
o
C
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
R
JA
o
C / W
o
C
R
JA
T
J,
T
STG
Collector-Emitter Breakdowe Voltage
( I
C
=10 uA, V
EB
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uA )
Collector-Emitter Breakdowe Voltage
( I
C
=10mA )
Emitter-Base Breakdowe Voltage
( I
E
=1.0 uA )
Symbol
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Min.
30
30
30
5.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( V
CB
=30 V )
( V
CB
=30 V, T
A
= 150
o
C )
-55 to +150
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
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