參數(shù)資料
型號(hào)： BC847PN
廠商： Diodes Inc.
英文描述： COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 互補(bǔ)對(duì)小信號(hào)晶體管表面貼裝
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 46K
代理商： BC847PN
DS30278 Rev. 2 - 2
2 of 3
BC847PN
Electrical Characteristics NPN BC847B Section
@ T
A
= 25°C unless otherwise specified
Notes:
2. Short duration pulse test used to minimize self-heating effect.
Characteristic
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
h
FE
Min
50
45
6
200
Typ
—
—
—
290
90
200
Max
—
—
—
450
250
600
Unit
V
V
V
—
Test Condition
I
C
= 10 A, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1 A, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
V
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200μA,
R
G
= 2.0k
f = 1.0kHz, f = 200Hz
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
—
mV
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
—
700
900
660
—
—
—
—
mV
Base-Emitter Voltage (Note 2)
V
BE(ON)
580
—
—
—
700
720
15
5.0
mV
Collector-Cutoff Current (Note 2)
I
CBO
I
CBO
nA
μA
Gain Bandwidth Product
f
T
100
300
—
MHz
Collector-Base Capacitance
C
CBO
—
3.5
6.0
pF
Noise Figure
NF
—
2.0
10
dB
Characteristic
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
h
FE
Min
-50
-45
-5
220
Typ
—
—
—
290
-75
-250
Max
—
—
—
475
-300
-650
Unit
V
V
V
—
Test Condition
I
C
= 10 A, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1 A, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
V
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200μA,
R
= 2.0k
f = 1.0kHz, f = 200Hz
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
—
mV
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
—
-700
-850
-650
—
—
—
—
-950
-750
-820
-15
-4.0
mV
Base-Emitter Voltage (Note 2)
V
BE(ON)
-600
—
—
—
mV
Collector-Cutoff Current (Note 2)
I
CBO
I
CBO
nA
μA
Gain Bandwidth Product
f
T
100
200
—
MHz
Collector-Base Capacitance
C
CBO
—
3
4.5
pF
Noise Figure
NF
—
—
10
dB
Electrical Characteristics PNP BC857B Section
@ T
A
= 25°C unless otherwise specified
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BC847PN-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC847PN-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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