參數(shù)資料
型號(hào)： BC847B-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大小： 39K
代理商： BC847B-7
THERMAL DATA
R
thj-amb
R
thj-SR
Mountedon a ceramic substrate area = 10 x8 x 0.6mm
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
420
330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= 30 V
V
CE
= 30 V
I
C
= 10
μ
A
T
amb
= 150
o
C
15
5
nA
μ
A
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
50
V
I
C
= 10
μ
A
50
V
I
C
= 2 mA
45
V
I
C
= 10
μ
A
6
V
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.5 mA
I
B
= 5 mA
0.09
0.2
0.25
0.6
V
V
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.5 mA
I
B
= 5 mA
0.75
0.9
V
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= 2 mA
I
C
= 10 mA
I
C
= 10
μ
A
I
C
= 2 mA
V
CE
= 5 V
V
CE
= 5 V
0.58
0.63
0.7
0.7
0.77
V
V
h
FE
DC Current Gain
V
CE
= 5 V
V
CE
= 5 V
200
150
290
450
f
T
Transition Frequency
I
C
= 10 mA V
CE
= 5 V f = 100MHz
300
MHz
C
CB
Collector Base
Capacitance
Collector Emitter
Capacitance
Noise Figure
I
E
= 0
V
CB
= 10 V
f = 1 MHz
4.5
pF
C
EB
I
C
= 0
V
EB
= 0.5 V
f = 1 MHz
9
pF
NF
V
CE
= 5 V
f = 200 Hz
V
CE
= 5 V
V
CE
= 5 V
I
C
= 0.2 mA
R
G
= 2 K
I
C
= 2 mA
I
C
= 2 mA
f = 1KHz
2
10
dB
h
ie
h
re
h
fe
Input Impedance
f = 1KHz
3.2
4.5
8.5
K
10
-4
Reverse Voltage Ratio
f = 1KHz
2
Small Signal Current
Gain
Output Admittance
V
CE
= 5 V
I
C
= 2 mA
f = 1KHz
330
h
oe
V
CE
= 5 V
I
C
= 2 mA
f = 1KHz
30
60
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
BC847
2/4
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