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參數(shù)資料
| 型號： | BC847AT |
| 廠商： | Diodes Inc. |
| 英文描述： | High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-SOIC -55 to 125 |
| 中文描述： | 高速CMOS邏輯4/16位輸出線性解碼器/多路解復(fù)用器 SOIC-20封裝 工作溫度：-55℃_125℃ |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BC847AT |
Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC847A,B,C
1
2
1
2
3
3
SOT-23
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
45
50
6.0
100
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
o
C
C
P
D
225
1.8
556
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
Derate above 25
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C
C
P
D
300
2.4
417
mW
mW /
o
C
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
BC847A=1E; BC847B=1F; BC847C=1G
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
R
JA
o
C / W
o
C
R
JA
T
J,
T
STG
Collector-Emitter Breakdowe Voltage
( I
C
=10 uA, V
EB
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uA )
Collector-Emitter Breakdowe Voltage
( I
C
=10mA )
Emitter-Base Breakdowe Voltage
( I
E
=1.0 uA )
Symbol
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Min.
50
45
50
6.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( V
CB
=30 V )
( V
CB
=30 V, T
A
= 150
o
C )
-55 to +150
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
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| BC847A-T | 功能描述:兩極晶體管 - BJT 100mA 45V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847AT T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847AT,115 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-236AA |
| BC847AT_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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