參數(shù)資料
型號(hào)： BC847AM
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： 45 V, 100 mA NPN general-purpose transistors
中文描述： 45伏, 100毫安 NPN型通用晶體管
封裝： BC847<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC847<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC
文件頁數(shù)： 6/15頁
文件大小： 97K
代理商： BC847AM
BC847_BC547_SER_7
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
6 of 15
NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
7.
Characteristics
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
[2]
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-basecut-off
current
Characteristics
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
collector-emitter
saturation voltage
-
-
100
nA
h
FE
V
CE
= 5 V; I
C
= 10
μ
A
V
CE
= 5 V; I
C
= 10
μ
A
V
CE
= 5 V; I
C
= 10
μ
A
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
-
-
-
110
110
200
420
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
-
-
-
800
220
450
800
200
400
-
-
700
770
1.5
V
CEsat
mV
mV
mV
mV
mV
mV
pF
[1]
-
V
BEsat
base-emitter
saturation voltage
[2]
-
[2]
-
V
BE
base-emitter voltage
[2]
580
-
-
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
emitter capacitance
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
transition frequency
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
noise figure
I
C
= 200
μ
A; V
CE
= 5 V;
R
S
= 2 k
; f = 1 kHz;
B = 200 Hz
C
e
-
11
-
pF
f
T
100
-
-
MHz
NF
-
2
10
dB
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