![](http://datasheet.mmic.net.cn/380000/BC850-A-AE3-R_datasheet_16747747/BC850-A-AE3-R_3.png)
BC846-BC850
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-027,C
3 of 4
T Y PICAL CHARACT ERIS T ICS
Static Characteristic
0
Collector-Emitter Voltage, V
CE
(V)
8
12
4
16
20
0
20
40
60
80
100
C
C
(
I
B
=400μA
I
B
=350μA
I
B
=300μA
I
B
=250μA
I
B
=200μA
I
B
=150μA
I
B
=100μA
I
B
=50μA
1
100
10
1000
10
100
1000
10000
DC Current Gain
D
F
Collector Current, I
C
(mA)
V
CE
=5V
1
100
10
1000
10
100
1000
10000
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
S
B
,
C
Collector Current I
C
(mA)
V
CE(sat)
V
BE(SAT)
I
C
=10I
B
0.1
0.8
0.4
1.0
0.1
1
10
100
Base-Emitter on Voltage
C
C
(
Base-Emitter Voltage, V
BE
(V)
0.2
0.6
1.2
V
CE
=2V
1
100
10
0.1
1
10
100
Collector Output Capacitance
C
o
(
Collector-Base Voltage, V
CB(
V)
1000
f=1MHz
0.1
10
1
1
10
100
1000
C
P
T
(
100
V
=5V
Current Gain Bandwidth Product
Collector Current, I
C
(mA)