參數(shù)資料
型號： BC846BQ62702-C1746
英文描述： TRANSISTOR SOT-23
中文描述： 晶體管的SOT - 23
文件頁數(shù)： 2/2頁
文件大?。?/td> 67K
代理商： BC846BQ62702-C1746
DS30250 Rev. 3 - 2
2 of 2
BC846AW - BC848CW
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3) BC846
BC847
BC848
V
(BR)CBO
80
50
30
—
—
—
—
—
—
V
I
C
= 10 A, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
V
(BR)CEO
65
45
30
—
—
—
—
—
—
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BC846, BC847
(BR)EBO
6
5
—
—
V
I
E
= 1 A, I
C
= 0
DC Current Gain
Current Gain Group A
B
(Note 3) C
h
FE
110
200
420
180
290
520
220
450
800
—
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
—
90
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
—
700
900
—
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3)
V
BE(ON)
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current (Note 3)
I
CBO
I
CBO
—
—
—
—
15
5.0
nA
μA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
300
—
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
—
3.0
4.5
pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
V
CE
= 5V, I
C
= 200μA,
R
S
= 2.0k
f = 1.0kHz, f = 200Hz
XXX = Product Type Marking Code (See Page 1), e.g. K1Q = BC846AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Y
Marking Information
Notes: 3. Short duration pulse test to minimize self-heating effect.
*xx = device type, e.g. BC846AW-7.
相關PDF資料
PDF描述
BC847AL TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-23
BC847BW-7 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-323
BC847CL TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-23
BC848AL TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23
BC848AW-7 MEMORY, 168 PIN PC-100 64MB SDR
相關代理商/技術參數(shù)
參數(shù)描述
BC846BQ-7-F 制造商:Diodes Incorporated 功能描述:
BC846BR TR 功能描述:TRANSISTOR-SMALL SINGAL 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:- 電壓 - 集射極擊穿（最大值）:65V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:250mV @ 500μA，10mA 電流 - 集電極截止（最大值）:15nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:200 @ 2mA，5V 功率 - 最大值:- 頻率 - 躍遷:100MHz 工作溫度:- 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:SOT-23 標準包裝:1
BC846BRF 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:250mW, NPN Small Signal Transistor
BC846BRFG 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:250mW, NPN Small Signal Transistor
BC846BRTA 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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