參數(shù)資料
型號(hào): BC808W
廠商: DIOTEC SEMICONDUCTOR AG
元件分類(lèi): 功率晶體管
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 174K
代理商: BC808W
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
01.11.2003
5
General Purpose Transistors
BC 807W / BC 808W
Characteristics, T
j
= 25 C
Kennwerte, T
j
= 25 C
Typ.
Min.
Max.
Collector saturation voltage – Kollektor-Sttigungsspg.
- I
C
= 500 mA, - I
B
= 50 mA
Base saturation voltage – Basis-Sttigungsspannung
- V
CEsat
0.7 V
- I
C
= 500 mA, - I
B
= 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- V
BEsat
1.3 V
- V
CE
= 1 V, - I
C
= 500 mA
Collector-Base cutoff current – Kollektorreststrom
- V
BE
1.2 V
I
E
= 0, - V
CB
= 20 V
I
E
= 0, - V
CB
= 20 V, T
j
= 150 C
Emitter-Base cutoff current – Emitterreststrom
- I
CB0
- I
CB0
100 nA
5 A
I
C
= 0, - V
EB
= 4 V
Gain-Bandwidth Product – Transitfrequenz
- I
EB0
100 nA
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
f
T
80 MHz
100 MHz
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
C
CB0
10 pF
R
thA
620 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC 817W / BC 818W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstrkungsgruppen pro Typ
BC 807-16W = 5A
BC 807-25W = 5B
BC 807-40W = 5C
BC 807W = 5D
BC 808-16W = 5E
BC 808-25W = 5F
BC 808-40W = 5G
BC 808W = 5H
相關(guān)PDF資料
PDF描述
BC808-16W Surface mount Si-Epitaxial PlanarTransistors
BC808-25W Surface mount Si-Epitaxial PlanarTransistors
BC808F PNP Silicon Transistor (High current application Switching application)
BC817-16-AE3-R NPN GENERAL PURPOSE AMPLIFIER
BC817-25-AE3-R NPN GENERAL PURPOSE AMPLIFIER
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