- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385125 > BC807 (GE Security, Inc.) Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）) PDF資料下載
參數(shù)資料
| 型號(hào)： | BC807 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）) |
| 中文描述： | 小信號(hào)晶體管（民進(jìn)黨）（小信號(hào)晶體管（民進(jìn)黨）） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | BC807 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BC807, BC808
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at –V
CE
= 1 V, –I
C
= 100 mA
Current Gain Group-16
-25
-40
-16
-25
-40
at –V
CE
= 1 V, –I
C
= 300 mA
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
–
–
–
–
–
–
250
400
600
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction Substrate
Backside
R
thSB
–
–
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
450
1)
K/W
Collector Saturation Voltage
at –I
C
= 500 mA, –I
B
= 50 mA
–V
CEsat
–
–
0.7
V
Base-Emitter Voltage
at –V
CE
= 1 V, –I
C
= 300 mA
–V
BE
–
–
1.2
V
Collector-Emitter Cutoff Current
at –V
CE
= 45 V
at –V
CE
= 25 V
at –V
CE
= 25 V, T
j
= 150 °C
BC807
BC808
–I
CES
–I
CES
–I
CES
–
–
–
–
–
–
100
100
5
nA
nA
μ
A
Emitter-Base Cutoff Current
at –V
EB
= 4 V
–I
EBO
–
–
100
nA
Gain-Bandwidth Product
at –V
CE
= 5 V, –I
C
= 10 mA, f = 50 MHz
f
T
–
100
–
MHz
Collector-Base Capacitance
at –V
CB
= 10 V, f = 1 MHz
C
CBO
12
pF
1)
Device on fiberglass substrate, see layout
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC817-16 | NPN Small Signal Transistor 310mW |
| BC817-25 | NPN Small Signal Transistor 310mW |
| BC817-40 | NPN Small Signal Transistor 310mW |
| BC817-16LT1 | General Purpose Transistors(NPN Silicon) |
| BC817-25LT1 | General Purpose Transistors(NPN Silicon) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC807 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC807,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC807 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23 |
| BC807 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR ((NW)) |
| BC807.16 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 500MA I(C) | TO-226AA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。