參數(shù)資料
型號(hào): BC69-25PA
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: 20 V, 2 A PNP medium power transistors
中文描述: 20伏,2安PNP型中等功率晶體管
封裝: BC69-16PA<SOT1061 (HUSON3)|<<http://www.nxp.com/packages/SOT1061.html<1<Always Pb-free,;BC69-25PA<SOT1061 (HUSON3)|<<http://www.nxp.com/packages/SOT1061.html<1<Alwa
文件頁數(shù): 13/24頁
文件大?。?/td> 253K
代理商: BC69-25PA
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
13 of 24
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 8.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
[1]
Pulse test: t
p
300
s;
= 0.02.
Characteristics
Conditions
V
CB
=
25 V; I
E
= 0 A
V
CB
=
25 V; I
E
= 0 A;
T
j
= 150
C
V
EB
=
5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
100
10
Unit
nA
A
I
EBO
emitter-base cut-off
current
DC current gain
-
-
100
nA
h
FE
V
CE
=
10 V
I
C
=
5 mA
V
CE
=
1 V
I
C
=
500 mA
I
C
=
1 A
I
C
=
2 A
V
CE
=
1 V
I
C
=
500 mA
I
C
=
500 mA
I
C
=
1 A; I
B
=
100 mA
I
C
=
2 A; I
B
=
200 mA
V
CE
=
10 V; I
C
=
5 mA
V
CE
=
1 V; I
C
=
1 A
V
CB
=
10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
=
5 V; I
C
=
50 mA;
f = 100 MHz
50
-
-
DC current gain
[1]
85
-
-
-
375
-
-
[1]
60
[1]
40
DC current gain
h
FE
selection -16
h
FE
selection -25
collector-emitter
saturation voltage
[1]
100
-
-
-
250
375
0.5
0.6
0.7
1
-
[1]
160
V
CEsat
[1]
-
V
V
V
V
pF
[1]
V
BE
base-emitter voltage
[1]
-
-
-
28
[1]
-
C
c
collector capacitance
-
f
T
transition frequency
40
140
-
MHz
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