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參數(shù)資料
| 型號： | BC557C |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 217K |
| 代理商： | BC557C |
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
–65
–45
–30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = –100
μ
Adc)
BC556
BC557
BC558
V(BR)CBO
–80
–50
–30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
–5.0
–5.0
–5.0
—
—
—
—
—
—
V
ON CHARACTERISTICS
DC Current Gain
(IC = –10
μ
Adc, VCE = –5.0 V)
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
hFE
—
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –
100
mAdc, IB = –
5.0
mAdc)
VCE(sat)
—
---
–0.3
V
Base–Emitter Saturation Voltage
(IC = –
100
mAdc, IB = –
5.0
mAdc)
VBE(sat)
—
–1.0
—
V
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
–0.55
—
–0.62
–0.7
–0.7
–0.82
V
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
BC556
BC557
BC558
fT
150
150
150
280
320
360
—
—
—
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Cob
—
3.0
6.0
pF
M C C
BC5
5
6 thru BC5
5
8
B
Revision:
7
2009/0
9
/
0
8
TM
Micro Commercial Components
www.
mc c semi
.c om
2 of 5
I
—
-100
nA
CBO
Collector Cut-off Current
(VCB = –70 V, IE = 0)
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC557C AMO | 功能描述:兩極晶體管 - BJT TRANS GP AMMO WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC557C,112 | 功能描述:兩極晶體管 - BJT TRANS GP BULK DLT PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC557C,126 | 功能描述:兩極晶體管 - BJT TRANS GP AMMO WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC557C | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP TO-92 |
| BC557C/E6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-92 |
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