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參數(shù)資料
| 型號： | BC328 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP)(小信號晶體管（PNP）) |
| 中文描述： | 小信號晶體管（民進黨）（小信號晶體管（民進黨）） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 243K |
| 代理商： | BC328 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at –V
CE
= 1 V, –I
C
= 100 mA
Current Gain Group-16
-25
-40
at –V
CE
= 1 V, –I
C
= 300 mA
Current Gain Group-16
-25
-40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
200
1)
K/W
Collector-Emitter Cutoff Current
at –V
CE
= 45 V
at –V
CE
= 25 V
at –V
CE
= 45 V, T
amb
= 125 °C
at –V
CE
= 25 V, T
amb
= 125 °C
BC327
BC328
BC327
BC328
–I
CES
–I
CES
–I
CES
–I
CES
–
–
–
–
2
2
–
–
100
100
10
10
nA
nA
μ
A
μ
A
Collector-Emitter Breakdown Voltage
at –I
C
= 10 mA
BC327
BC328
–
V
(BR)CEO
–
V
(BR)CEO
45
25
–
–
–
–
V
V
Collector-Emitter Breakdown Voltage
at –I
C
= 0.1 mA
BC327
BC328
–
V
(BR)CES
–
V
(BR)CES
50
30
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
at –I
E
= 0.1 mA
–
V
(BR)EBO
5
–
–
V
Collector Saturation Voltage
at –I
C
= 500 mA, –I
B
= 50 mA
–V
CEsat
–
–
0.7
V
Base-Emitter Voltage
at –V
CE
= 1 V, –I
C
= 300 mA
–V
BE
–
–
1.2
V
Gain-Bandwidth Product
at –V
CE
= 5 V, –I
C
= 10 mA, f = 50 MHz
f
T
–
100
–
MHz
Collector-Base Capacitance
at –V
CB
= 10 V, f = 1 MHz
C
CBO
–
12
–
pF
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC327, BC328
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC328/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP General Purpose Transistors |
| BC328/E6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA |
| BC328/E7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA |
| BC328_00 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| BC328_J35Z | 功能描述:兩極晶體管 - BJT PNP GEN PURP XTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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