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參數(shù)資料
| 型號(hào)： | BC212A |
| 英文描述： | Cyclone FPGA 12K FBGA-256 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 50V五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 107K |
| 代理商： | BC212A |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10
μ
Adc, VCE = –5.0 Vdc)
BC212
BC213
BC214
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC212
BC213
BC214
(IC = –100 mAdc, VCE = –5.0 Vdc)(1)
BC212, BC214
BC213
hFE
40
40
100
60
80
140
—
—
—
—
—
—
—
—
120
140
—
—
—
—
—
600
—
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)(1)
VCE(sat)
—
—
–0.10
–0.25
—
–0.6
Vdc
Base–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
—
–1.0
–1.4
Vdc
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(on)
–0.6
–0.62
–0.72
Vdc
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
BC212
BC214
BC213
fT
—
—
—
280
320
360
—
—
—
MHz
Common–Base Output Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Cob
—
—
6.0
pF
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 k
, f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 k
, f = 1.0 kHz, f = 200 Hz)
BC214
BC212, BC213
NF
—
—
—
—
2
10
dB
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
BC212
BC213
BC214
BC212B
hfe
60
80
140
200
—
—
—
—
—
—
—
400
—
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC212B | 功能描述:兩極晶體管 - BJT PNP -50V -100mA HFE/400 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC212B WAF | 制造商:ON Semiconductor 功能描述: |
| BC212B | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| BC212B_D26Z | 功能描述:兩極晶體管 - BJT PNP -50V -100mA HFE/400 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC212B_D27Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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