參數(shù)資料
型號(hào): BC161
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP medium power transistors
中文描述: 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 50K
代理商: BC161
1997 May 12
3
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC160
BC161
collector-emitter voltage
BC160
BC161
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
40
60
V
V
V
CEO
open base
65
65
40
60
5
1
1.5
200
3.7
+150
175
+150
V
V
V
A
A
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
case
45
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
in free air
200
35
K/W
K/W
相關(guān)PDF資料
PDF描述
BC161 ECONOLINE: REC5-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 5W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
BC161-10 PNP medium power transistors
BC161-16 PNP medium power transistors
BC160 Small Signal Transistors
BC161 Small Signal Transistors
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BC161-16 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2