參數(shù)資料
型號: BB911
廠商: NXP Semiconductors N.V.
英文描述: VHF variable capacitance diode
中文描述: 甚高頻變?nèi)荻O管
文件頁數(shù): 2/4頁
文件大小: 30K
代理商: BB911
1996 May 03
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BB911/A
FEATURES
High linearity
Matched to 2.5%
Hermetically sealed leaded glass
SOD68 (DO-34) package
C28: 2.7 pF; ratio: 25.
APPLICATIONS
Electronic tuning in VHF television
tuners, band A up to 160 MHz
VCO.
DESCRIPTION
The BB911/A is a variable
capacitance diode, fabricated in
planar technology, and encapsulated
in the hermetically sealed leaded
glass SOD68 (DO-34) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+100
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
Cathode side indicated by a red band on a black body.
Additional white band.
handbook, halfpage
MAM234
k
a
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 40 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
2.4
23.3
TYP.
MAX.
UNIT
I
R
reverse current
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
°
C; see Fig.3
f = 100 MHz; note 1
V
R
= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
10
200
2
75
2.9
28.4
nA
nA
pF
pF
r
s
C
d
diode series resistance
diode capacitance
capacitance ratio
capacitance matching
V
R
= 0.5 to 28 V
2.5
%
C
C
d 28V
)
)
---------------------
C
d
C
d
----------
相關(guān)PDF資料
PDF描述
BF583 NPN high-voltage transistors
BF901 Silicon n-channel dual gate MOS-FETs
BF901R Silicon n-channel dual gate MOS-FETs
BF960 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE
BFC505 NPN wideband cascode transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BB-911-06 制造商:Maxxtro 功能描述:Bulk
BB-911-10 制造商:Maxxtro 功能描述:Bulk
BB-911-15 制造商:Maxxtro 功能描述:Bulk
BB-912-06 制造商:Maxxtro 功能描述:
BB-913-06 制造商:Maxxtro 功能描述: