
BB814-G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 25-Feb-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 83318
Dual Varicap Diode
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
08/3 k per 7" reel (8 mm tape), 15 k/box
FEATURES
Silicon epitaxial planar diode
Common cathode
AEC-Q101 qualified
Base P/N-HG3 - green, automotive grade
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
Tuning of separate resonant circuits
Push-pull circuits in FM range
Especially for car radios
Note
(1)
In the reverse voltage range of V
R
= (2 V to 8 V) for diodes 4 taped in sequence the max. deviation is 3 %
1
2
3
PARTS TABLE
PART
BB814-1-G
BB814-2-G
TYPE DIFFERENTIATION
V
RRM
= 20 V, C
D2
= 43 pF to 45.5 pF
V
RRM
= 20 V, C
D2
= 44.5 pF to 46.5 pF
ORDERING CODE
BB814-1-HG3-08
BB814-2-HG3-08
TYPE MARKING
SG1
SG2
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Repetitive peak reverse voltage
Reverse voltage
Forward current
SYMBOL
V
RRM
V
R
I
F
VALUE
20
18
50
UNIT
V
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
Junction temperature
Storage temperature range
Operating temperature range
SYMBOL
T
j
T
stg
T
op
VALUE
125
- 55 to + 150
- 55 to + 125
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
V
R
= 16 V
V
R
= 16 V, T
j
= 60 °C
PART
SYMBOL
I
R
I
R
C
D2
C
D2
C
D8
C
D8
C
D2
/C
D8
R
s
MIN.
TYP.
MAX.
20
200
45.5
46.5
21.95
22.70
2.25
0.5
UNIT
nA
nA
pF
pF
pF
pF
Reverse current
Diode capacitance
(1)
V
R
= 2 V
BB814-1-G
BB814-2-G
BB814-1-G
BB814-2-G
43
44.5
19.1
19.75
2.05
V
R
= 8 V
Capacitance ratio
Series resistance
V
R
= 2 V, 8 V, f = 1 MHz
C
D
= 38 pF, f = 100 MHz