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參數(shù)資料
| 型號： | BB731S |
| 廠商： | GE Security, Inc. |
| 英文描述： | Tuner Diodes(調(diào)諧二極管) |
| 中文描述： | 調(diào)諧二極管（調(diào)諧二極管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BB731S |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
278
BB731S
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at I
R
= 100
μ
A
V
(BR)R
32
–
–
V
Leakage Current
at V
R
= 30 V
I
R
–
–
10
nA
Capacitance, f = 1 MHz
at V
R
= 28 V
at V
R
= 1 V
C
tot
C
tot
2.9
62.0
–
–
3.4
76.0
pF
pF
Effective Capacitance Ratio, f = 1 MHz
at V
R
= 1 to 28 V
C
tot
(1 V)
C
tot
(28V)
19.5
–
–
–
Series Resistance
at f = 300 MHz, C
tot
= 25 pF
r
s
–
1.0
–
Series Inductance
L
s
–
2.5
–
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse
bias voltage of V
R
= 0.5 to 28 V is max. 2.5%
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