參數(shù)資料
型號(hào): BB369S
廠商: GE Security, Inc.
英文描述: Tuner Diodes
中文描述: 調(diào)諧二極管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 38K
代理商: BB369S
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BB369S
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at I
R
= 100
μ
A
V
(BR)R
32
V
Leakage Current
at V
R
= 30 V
I
R
10
nA
Capacitance, f = 1 MHz
at V
R
= 28 V
at V
R
= 25 V
at V
R
= 1 V
at V
R
= 2 V
C
tot
C
tot
C
tot
C
tot
2.65
2.75
55.0
42.5
2.88
3.0
60.5
47.5
pF
pF
pF
pF
Effective Capacitance Ratio, f = 1 MHz
at V
R
= 1 to 28 V
Effective Capacitance Ratio
at V
R
= 2 to 25 V
Effective Capacitance Ratio
at V
R
= 1 to 2 V
C
tot
(1 V)
C
tot
(28V)
C
tot
(2 V)
C
tot
(25V)
C
tot
(1 V)
C
tot
(2 V)
20.0
15.3
1.29
23.0
17.8
Series Resistance
at f = 300 MHz, C
tot
= 25 pF
r
s
1.0
Series Inductance
L
S
2.5
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias
voltage of V
R
= 0.5 to 28 V is max. 3.0%
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