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參數(shù)資料
| 型號(hào)： | BB212 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | AM variable capacitance double diode |
| 中文描述： | 500 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 47K |
| 代理商： | BB212 |
1996 May 03
3
Philips Semiconductors
Product specification
AM variable capacitance double diode
BB212
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 500 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
I
R
reverse current
V
R
= 10 V; see Fig.3
V
R
= 10 V; T
j
= 85
°
C; see Fig.3
f = 500 MHz; note 1
see Figs 2 and 4
50
nA
300
2.5
nA
r
s
C
d
diode series resistance
diode capacitance
V
R
= 0.5 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 5.5 V; f = 1 MHz
V
R
= 8 V; f = 1 MHz
f = 1 MHz
500
140
620
pF
280
pF
pF
pF
40
22.5
90
22
capacitance ratio
C
C
d 8V
)
)
---------------------
MATCHING PROPERTIES
The capacitance of the two diodes in their common
package may differ within certain limits. The total, relative
capacitance difference between the two diodes in one
package may be found in Fig.5. The anode a1 or a2 with
the higher capacitance at V
R
= 3 V, is identified by a white
dot.
BASIC TOLERANCE
The relative deviation of the capacitance value at
V
R
= 0.5 V is maximum 3.5%.
k
C
0.5V
-------------------------------------------------------------
(
)
C
0.5 V
(
)
–
C
2
0.5 V
=
<3.5%
=
ADDITIONAL TOLERANCE
(see Fig.5)
In the range of V
R
= 0.5 V to 8 V the following additional
tolerances are valid.
S < 2% for V
R
= 0.5 to 3 V
S < 4% for V
R
= 3 to 5.5 V
S < 6% for V
R
= 5.5 to 8 V.
C
1
is the capacitance of a1 when a1 > a2.
C
1
is the capacitance of a2 when a2 > a1.
S
C
1
C
2
------
V
R
C
1
C
2
------
0.5 V
–
=
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