參數(shù)資料
型號: BB133
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: VHF variable capacitance diode(VHF 可變電容二極管)
中文描述: VHF BAND, 42 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
封裝: PLASTIC, SMD, SC-76, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 54K
代理商: BB133
1998 Sep 15
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BB133
FEATURES
Excellent linearity
Excellent matching to 0.7% DMA
Very small plastic SMD package
C28: 2.5 pF; ratio: 16
Low series resistance.
APPLICATIONS
Electronic tuning in VHF television
tuners, band B up to 460 MHz
VCO.
DESCRIPTION
The BB133 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
The unmatched type, BB150 has the
same specification.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+125
Fig.1 Simplified outline (SOD323) and symbol.
Marking code:
P3.
Cathode side indicated by a bar.
handbook, 4 columns
k
a
MAM130
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 30 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
R
reverse current
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
°
C; see Fig.3
f = 100 MHz; note 1
V
R
= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
38
2.2
14
10
nA
200
0.9
46
2.6
21
nA
pF
pF
r
s
C
d
diode series resistance
diode capacitance
capacitance ratio
capacitance matching
V
R
= 0.5 to 28 V; in a sequence of 4 diodes
(gliding)
V
R
= 0.5 to 28 V; in a sequence of 15 diodes
(gliding)
0.7
%
2
%
C
C
d 28V
)
)
---------------------
C
d
d
--C
相關(guān)PDF資料
PDF描述
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