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參數(shù)資料
| 型號(hào)： | BB119 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Variable capacitance diode |
| 中文描述： | 17 pF, SILICON, VARIABLE CAPACITANCE DIODE, DO-35 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | BB119 |
1996 May 03
2
Philips Semiconductors
Product specification
Variable capacitance diode
BB119
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
C10: 17 pF; ratio: 1.3.
APPLICATIONS
Automatic frequency control.
DESCRIPTION
The BB119 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD27 (DO-35) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
15
V
continuous forward current
storage temperature
200
mA
°
C
°
C
+150
operating junction temperature
150
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
handbook, halfpage
MAM238
k
a
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
= 4 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
1.3
TYP.
0.2
MAX.
UNIT
I
R
reverse current
V
R
= 15 V; see Fig.3
V
R
= 15 V; T
j
= 150
°
C; see Fig.3
f = 200 MHz; note 1
V
R
= 4 V; f = 1 MHz; see Figs 2 and 4
V
R
= 10 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
50
nA
μ
A
pF
2
1.5
25
r
s
C
d
diode series resistance
diode capacitance
17
pF
capacitance ratio
C
C
d 10V
)
)
--------------------
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