參數(shù)資料
型號(hào): BAY80-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
中文描述: Diodes (General Purpose, Power, Switching) 150 Volt 100mA 1.0 Amp IFSM
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 100K
代理商: BAY80-TAP
www.vishay.com
2
Document Number 85553
Rev. 1.9, 17-Aug-10
BAY80
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
I
F
= 0.1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
R
= 120 V
V
R
= 120 V, T
j
= 150 °C
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz
I
F
= 10 mA
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
I
R
Min.
400
Typ.
Max.
520
Unit
mV
Forward voltage
630
780
mV
730
920
mV
780
1000
mV
1070
mV
Reverse current
100
nA
100
μA
Breakdown voltage
V
(BR)
150
V
Diode capacitance
C
D
r
f
1.5
5
pF
Ω
Differential forward resistance
5
Reverse recovery time
t
rr
50
ns
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
0
40
8
0
120
160
0.01
0.1
1
10
1000
I
v
e
u
r
μ
A
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 90
8
4
100
Scattering Limit
V
R
=
V
RRM
0
0.4
0.
8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 90
8
5
Scattering Limit
T
j
= 25 °C
Figure 3. Differential Forward Resistance vs. Forward Current
0.1
1
10
1
10
100
1000
r
w
a
f
I
F
- For
w
ard C
u
rrent (mA)
100
94 90
8
9
Ω
T
j
= 25 °C
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