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參數(shù)資料
| 型號(hào)： | BAV99-AE3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH CONDUCTANCE ULTRA FAST DIODE |
| 中文描述： | 高電導(dǎo)超快速二極體 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 107K |
| 代理商： | BAV99-AE3-R |
BAV99
DIODE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R601-005,B
2 of 4
ABS OLUT E MAX IMUM RAT INGS *
(Ta = 25
, unless otherwise specified.
)
PARAMETER
SYMBOL
W
IV
I
F(AV)
I
FM
I
FRM
RATINGS
70
200
600
700
1.0
2.0
350
200
+125
-40 ~ +150
UNIT
V
mA
mA
mA
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak
Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
I
FSM
A
SOT-23
SOT-363
mW
mW
Total Device Dissipation
P
D
Junction Temperature
Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note: 1. These ratings are based on a maximum junction temperature of 150°C
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
RATINGS
357
625
UNIT
/W
/W
SOT-23
SOT-363
Thermal Resistance Junction to Ambient
θ
JA
ELECT RICAL CHARACT ERIS T ICS
(Ta = 25
,
unless otherwise specified.
)
PARAMETER
SYMBOL
V
R
TEST CONDITIONS
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
I
F
= 10mA, t
R
= 20nS
V
R
= 70V
V
R
= 25V, T
a
= 150°C
V
R
= 70V, T
a
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA
R
L
= 100
MIN
70
TYP
MAX
715
855
1.0
1.25
1.75
2.5
30
50
1.5
UNIT
V
mV
mV
V
V
V
Breakdown Voltage
Maximum Instantaneous Forward
Voltage
V
FM
Peak Forward Voltage
V
SM
Maximum Instantaneous Reverse
Current
I
RM
μA
Diode Capacitance
C
O
pF
Reverse Recovery Time
t
RR
6.0
ns
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