參數(shù)資料
型號(hào)： BAV70M
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： High-speed switching diodes
中文描述： 高速開關(guān)二極管
封裝： BAV70<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BAV70<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BA
文件頁(yè)數(shù)： 13/15頁(yè)
文件大?。?/td> 105K
代理商： BAV70M
BAV70_SER_7
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
13 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
12. Revision history
Table 10.
Document ID
BAV70_SER_7
Revision history
Release date
20071127
Data sheet status
Product data sheet
Change notice
-
Supersedes
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
Modifications:
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAV70M added
Section 1.1 “General description”
: amended
Table 1 “Product overview”
: added
Table 2 “Quick reference data”
: added
Table 6 “Limiting values”
: for BAV70, BAV70S and BAV70W change of V
RRM
maximum
value from 85 V to 100 V
Table 6 “Limiting values”
: for BAV70, BAV70S and BAV70W change of V
R
maximum value
from 75 V to 100 V
Table 8 “Characteristics”
: for BAV70, BAV70S, BAV70T and BAV70W change of
I
R
condition V
R
from 75 V to 80 V for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAV70, BAV70S and BAV70W change of I
R
maximum value
from 2.5
μ
A to 0.5
μ
A for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAV70T change of I
R
maximum value from 2.0
μ
A to 0.5
μ
A
for T
j
= 25
°
C
Table 8 “Characteristics”
: for BAV70, BAV70S, BAV70T and BAV70W change of
I
R
maximum value from 60
μ
A to 30
μ
A for I
R
condition V
R
= 25 V; T
j
= 150
°
C
Table 8 “Characteristics”
: for BAV70, BAV70S, BAV70T and BAV70W change of
I
R
condition V
R
from 75 V to 80 V for T
j
= 150
°
C
Section 8 “Test information”
: added
Section 10 “Packing information”
: added
Section 11 “Soldering”
: added
Section 13 “Legal information”
: updated
20020403
Product specification
19971021
Product specification
20040204
Product specification
20020405
Product specification
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
-
-
-
-
BAV70_5
BAV70S_1
BAV70T_2
BAV70W_5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BAV70M T/R 功能描述:二極管 - 通用，功率，開關(guān) SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAV70M,315 功能描述:二極管 - 通用，功率，開關(guān) SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAV70M3T5G 功能描述:二極管 - 通用，功率，開關(guān) 75V MED SPEED SWTCH RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BAV70-MR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE BAV70 MINIREEL 500PCS
BAV70M-TP 功能描述:0.2A,75V,SCHOTTKY,SOT-723 PKG 制造商:micro commercial co 系列:- 零件狀態(tài):在售 二極管配置:1 對(duì)共陰極 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:75V 電流 - 平均整流（Io）（每二極管）:200mA 不同 If 時(shí)的電壓 - 正向（Vf:1.25V @ 150mA 速度:小信號(hào) =< 200mA（Io），任意速度 反向恢復(fù)時(shí)間（trr）:4ns 不同?Vr 時(shí)的電流 - 反向漏電流:2.5μA @ 75V 工作溫度 - 結(jié):-65°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:SOT-723 供應(yīng)商器件封裝:SOT-723 標(biāo)準(zhǔn)包裝:1
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