參數(shù)資料
型號(hào): BAV70-BOX(SUPPLIEDREELOF3K)
英文描述: 3.3V 32K/64K x 16/18 Dual-Port Static RAM
中文描述: 二極管KLEINSIGNAL 3000ST河DURCHM 0.180毫米Inhalt親Packung:3000沙頭角。
文件頁數(shù): 2/4頁
文件大?。?/td> 94K
代理商: BAV70-BOX(SUPPLIEDREELOF3K)
BAV 70
Siemens Aktiengesellschaft
165
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
= 100 ns,
D
= 0.05
t
r
= 0.6 ns,
R
j
= 50
Oscillograph:
R
= 50
t
r
= 0.35 ns
C
1 pF
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Breakdown voltage
I
(BR)
= 100
μ
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
(BR)
70
μ
A
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 C
V
R
= 70 V,
T
A
= 150 C
I
R
2.5
30
50
AC characteristics
ns
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
t
rr
6
mV
V
F
715
855
1000
1250
pF
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
D
1.5
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