參數(shù)資料
型號: BAV300
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Epitaxial Planar Diodes
中文描述: 硅外延平面二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 61K
代理商: BAV300
BAV300...BAV303
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85545
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Reverse current
Test Conditions
I
F
=100mA
V
R
=50V
V
R
=100V
V
R
=150V
V
R
=200V
T
j
=100 C, V
R
= 50V
T
j
=100 C, V
R
= 100V
T
j
=100 C, V
R
= 150V
T
j
=100 C, V
R
= 200V
I
=100 A, t
p
/T=0.01,
R
t
p
=0.3ms
Type
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
Min
Typ
Max
1
100
100
100
100
15
15
15
15
Unit
V
nA
nA
nA
nA
A
A
A
A
V
V
V
V
pF
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Breakdown voltage
60
120
200
250
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
=0, f=1MHz
I
F
=10mA
I
F
=I
R
=30mA, i
R
=3mA,
R
L
=100
1.5
5
50
ns
Characteristics
(T
j
= 25 C unless otherwise specified)
0
40
T
j
– Junction Temperature (
°
C )
80
120
160
0.01
0.1
1
10
1000
I
R
200
94 9084
100
Scattering Limit
V
R
=V
RRM
Figure 1. Reverse Current vs. Junction Temperature
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
F
V
F
– Forward Voltage ( V )
2.0
94 9085
Scattering Limit
T
j
=25
°
C
Figure 2. Forward Current vs. Forward Voltage
相關PDF資料
PDF描述
BAV301 Silicon Epitaxial Planar Diodes
BAV302 Silicon Epitaxial Planar Diodes
BAV303 Silicon Epitaxial Planar Diodes
BAV301 SURFACE MOUNT SWITCHING DIODE
BAV302 SURFACE MOUNT SWITCHING DIODE
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