參數(shù)資料
型號: BAV23
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual high-voltage switching diodes
中文描述: 雙高壓開關二極管
封裝: BAV23<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 2002,;BAV23<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 20
文件頁數(shù): 4/13頁
文件大小: 281K
代理商: BAV23
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
4 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
T
j
= 25
C prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4]
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Per diode
V
F
forward voltage
[1]
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
; measured at I
R
= 1 mA.
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
25
C
[4]
-
250
150
+150
+150
mW
C
C
C
-
65
65
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
-
-
500
K/W
R
th(j-sp)
-
-
360
K/W
Characteristics
Conditions
Min
Typ
Max
Unit
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
C
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
-
-
-
-
-
1.0
1.25
100
100
2
50
V
V
nA
A
pF
ns
I
R
reverse current
C
d
t
rr
diode capacitance
reverse recovery time
[1]
-
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