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參數(shù)資料
| 型號： | BAV17-TAP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE GENPURP DO35-E2 - Ammo Pack |
| 中文描述： | Diodes (General Purpose, Power, Switching) 25 Volt 625mA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BAV17-TAP |
BAV17, BAV18, BAV19, BAV20, BAV21
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85543
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Junction Temperature
Fig. 2 -
Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
300
175
- 65 to + 175
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 100 mA
V
R
= 20 V
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
T
j
= 100 °C, V
R
= 20 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100 V
T
j
= 100 °C, V
R
= 150 V
T
j
= 100 °C, V
R
= 200 V
PART
SYMBOL
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
MIN.
TYP.
MAX.
1
100
100
100
100
100
15
15
15
15
15
UNIT
V
nA
nA
nA
nA
nA
μA
μA
μA
μA
μA
V
V
V
V
V
pF
Reverse current
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
25
60
120
200
250
Diode capacitance
Differential forward resistance
V
R
= 0 V, f = 1 MHz,
I
F
= 10 mA
I
F
= I
R
= 30 mA, i
R
= 3 mA
R
L
= 100
1.5
5
Reverse recovery time
t
rr
50
ns
0
40
80
120
160
0.01
0.1
1
10
1000
I
v
e
u
r
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9084
100
Scattering Limit
V
R
=
V
RRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAV19-TAP | Diode Small Signal Switching 120V 0.25A 2-Pin DO-35 Ammo |
| BAV17-TR | SWITCHING DIODE GENPURP DO35-E2 - Tape and Reel |
| BAV200 | Silicon Epitaxial Planar Diodes |
| BAV201 | Silicon Epitaxial Planar Diodes |
| BAV202 | Silicon Epitaxial Planar Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAV17-TR | 功能描述:二極管 - 通用，功率，開關(guān) 25 Volt 625mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAV18 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, High Voltage |
| BAV18_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Superfast Switching Si-Planar Diodes |
| BAV18_11 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Superfast Switching Si-Planar Diodes |
| BAV18-T/R | 制造商:Vishay Semiconductors 功能描述:DIODE SMALL SIGNAL 0.25A |
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