參數(shù)資料
型號(hào): BAV102-GS08
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Small Signal Switching 200V 0.25A 2-Pin Mini-MELF SOD-80 T/R
中文描述: Diodes (General Purpose, Power, Switching) 1.0 Amp 200V 500mW
文件頁數(shù): 2/4頁
文件大?。?/td> 75K
代理商: BAV102-GS08
BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 31-Jul-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85542
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Junction Temperature
Fig. 2 -
Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to lead
TEST CONDITION
SYMBOL
R
thJL
VALUE
350
UNIT
K/W
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500
K/W
Junction temperature
Storage temperature range
T
j
175
°C
°C
T
stg
- 65 to + 175
ELECTRICAL
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 100 mA
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100 V
T
j
= 100 °C, V
R
= 150 V
T
j
= 100 °C, V
R
= 200 V
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
I
R
= 100 μA, t
/T = 0.01,
t
p
= 0.3 ms
I
R
= 100 μA, t
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
I
F
= 10 mA
I
F
= I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
PART
SYMBOL
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
MIN.
TYP.
MAX.
1000
100
100
100
100
15
15
15
15
UNIT
mV
nA
nA
nA
nA
μA
μA
μA
μA
Reverse current
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
Breakdown voltage
BAV100
V
(BR)
60
V
BAV101
V
(BR)
120
V
BAV102
BAV103
V
(BR)
V
(BR)
200
250
V
V
Diode capacitance
C
D
1.5
pF
Differential forward current
r
f
5
Reverse recovery time
t
rr
50
ns
0
40
80
120
160
0.01
0.1
1
10
1000
I
v
e
u
r
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9084
100
Scattering Limit
V
R
=
V
RRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
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