參數(shù)資料
型號: BAT54CV
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Two Schottky barrier double diodes
中文描述: 0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE
封裝: ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù): 3/10頁
文件大?。?/td> 238K
代理商: BAT54CV
BAT54CV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
3 of 10
NXP Semiconductors
BAT54CV
Two Schottky barrier double diodes
[1]
T
j
= 25
°
C prior to surge.
Reflow soldering is the only recommended soldering method.
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
Per device, one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5]
Soldering point of cathode tab.
Per device, one diode loaded
P
tot
total power dissipation
T
amb
25
°
C
[2]
[3]
-
350
420
125
+125
+150
mW
mW
°
C
°
C
°
C
[4]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
in free air
[1][2]
[3]
-
-
-
-
360
300
175
K/W
K/W
K/W
[4]
-
R
th(j-sp)
thermal resistance from
junction to solder point
[5]
-
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