參數(shù)資料
型號(hào): BAT46WH
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Single Schottky barrier diode
中文描述: 0.25 A, 100 V, SILICON, SIGNAL DIODE
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 7/12頁
文件大?。?/td> 323K
代理商: BAT46WH
BAT46WH
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 27 July 2010
7 of 12
NXP Semiconductors
BAT46WH
Single Schottky barrier diode
8. Test information
The current ratings for the typical waveforms as shown in
Figure 7
,
8
and
9
are
calculated according to the equations:
I
F AV
with I
M
defined as peak current,
at DC, and
with I
RMS
defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
(1) I
R
= 1 mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle
δ
= 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 10. Reverse recovery time test circuit and waveforms
trr
(1)
+
I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50
Ω
I
F
D.U.T.
R
i
= 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 11. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle
δ
=
t
1
t
2
)
I
M
δ
×
=
I
RMS
I
F AV
)
=
I
RMS
I
M
δ
×
=
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