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參數(shù)資料
| 型號(hào)： | BAT46-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Schottky 100V 0.15A 2-Pin DO-35 T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 100 Volt 150mA 750mA IFSM |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | BAT46-TR |
BAT46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85662
Note
(1)
Pulse test; t
p
300 μs, ,
< 2 %
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Typical Instantaneous Forward Characteristics
Fig. 2 -
Typical Reverse Characteristics
Fig. 3 -
Admissible Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
TEST CONDITION
I
R
= 100 μA (pulsed)
V
R
= 1.5 V
V
R
= 1.5 V, T
j
= 60 °C
V
R
= 10 V
V
R
= 10 V, T
j
= 60 °C
V
R
= 50 V
V
R
= 50 V, T
j
= 60 °C
V
R
= 75 V
V
R
= 75 V, T
j
= 60 °C
I
F
= 0.1 mA
I
F
= 10 mA
I
F
= 250 mA
V
R
= 0 V, f = 1 MHz
V
R
= 1 V, f = 1 MHz
SYMBOL
V
(BR)
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
F
V
F
V
F
C
D
C
D
MIN.
100
TYP.
MAX.
UNIT
V
μA
μA
μA
μA
μA
μA
μA
μA
mV
mV
mV
pF
pF
Leakage current
(1)
0.5
5
0.8
7.5
2
15
5
20
250
450
1000
Forward voltage
(1)
Diode capacitance
10
6
I
w
a
u
r
F
1000
100
10
1
0.1
0.01
1.2
1
0.8
0.6
0.4
0.2
0
18546
V
F
- For
w
ard Voltage (V)
= 60 °C
T
j
25 °C
18547
I
v
e
u
r
R
0.01
0.1
1
10
100
0
20
40
60
80
100
V
R
- Re
v
erse Voltage (V)
T
j
= 60 °C
T
j
= 25 °C
0
50
100
150
200
250
0
25
50
75
100
125
150
175
200
Tam
b
b
ient Temperat
u
re (°C)
P
w
e
20134
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