參數(shù)資料
型號: BAS85-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Small Signal Schottky 30V 0.2A 2-Pin Mini-MELF SOD-80 T/R
中文描述: Schottky (Diodes & Rectifiers) 30 Volt 200mA 600 mA IFSM
文件頁數(shù): 2/4頁
文件大?。?/td> 70K
代理商: BAS85-GS18
BAS85
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Jan-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85510
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 -
Reverse Current vs. Junction Temperature
Fig. 3 -
Forward Current vs. Forward Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve beakdown voltage
Leakage current
TEST CONDITION
I
R
= 10 μA (pulsed)
V
R
= 25 V
Pulse test t
p
< 300 μs,
I
F
= 0.1 mA
Pulse test t
p
< 300 μs, I
F
= 1 mA
Pulse test t
< 300 μs,
I
F
= 10 mA
Pulse test t
< 300 μs,
I
F
= 30 mA
Pulse test t
p
< 300 μs,
I
F
= 100 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA
SYMBOL
V
(BR)
I
R
MIN.
30
TYP.
MAX.
UNIT
V
μA
0.2
2
Forward voltage
V
F
240
mV
V
F
320
mV
V
F
400
mV
V
F
500
mV
V
F
800
mV
Diode capacitance
C
D
10
pF
Reserve recovery time
t
rr
5
ns
0
20
40
60
80
100
120
140
160
180
200
25
50
T
j
- J
u
nction Temperat
u
re (°C)
75
100
125
150
15822
V
R
= 30
V
P
R
v
e
w
e
R
thJA
= 540 kW
P
- Limit
at 100 %
V
R
P
- Limit
at 80 %
V
R
0
0.5
1.0
1.5
15824
0.1
1
10
100
1000
T
j
= 125 °C
I
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
T
j
= 25 °C
1
10
100
1000
25
50
T
j
- J
u
nction Temperat
u
re (°C)
75
100
125
150
15823
V
R
=
V
RRM
I
R
v
e
u
r
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
15825
f = 1 MHz
V
R
- Re
v
erse
V
oltage (
V
)
C
D
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