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參數(shù)資料
| 型號： | BAS70H-04 |
| 廠商： | Diodes Inc. |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面貼裝肖特基勢壘二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 60K |
| 代理商： | BAS70H-04 |
DS30190 Rev. 4 - 4
1 of 1
BAS70H/-04/-05/-06
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
Approx. Weight: 0.008 grams
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Mechanical Data
Characteristic
Symbol
BAS70
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
V
RMS Reverse Voltage
V
R(RMS)
49
V
Forward Continuous Current (Note 1)
I
F
200
mA
Non-Repetitive Peak Forward Surge Current
@ t
p
1.0s
I
FSM
600
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
JA
625
K/W
Operating and Storage Temperature Range
T
j
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
70
—
V
I
R
= 10 A
t
p
<300μs, I
F
= 1.0mA
t
p
<300μs, I
F
= 15mA
t
p
< 300μs, V
R
= 50V
Forward Voltage
V
F
—
410
1000
mV
Peak Reverse Current
I
RM
100
nA
Junction Capacitance
C
j
2.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
—
5.0
ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000 s.
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
BAS70H Marking: K73
BAS70H-04 Marking: K74
BAS70H-05 Marking: K75
BAS70H-06 Marking: K76
USE BAS70 SERIES相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS70H-05 | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAS70H-06 | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAS70H | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAS70JW-7-F | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY |
| BAS70S | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS70H-04-7 | 制造商:Diodes Incorporated 功能描述:0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| BAS70H-05 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAS70H-05-7 | 制造商:Diodes Incorporated 功能描述:0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| BAS70H-06 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAS70H115 | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY 70V 0.07A SOD123 |
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