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參數(shù)資料
| 型號(hào)： | BAS520-02V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode |
| 中文描述： | Schottky (Diodes & Rectifiers) 30 Volt 200mA Single |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | BAS520-02V-GS18 |
www.vishay.com
2
Document Number 85846
Rev. 1.3, 05-Aug-10
BAS520-02V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Typical Characteristics
T
amb
= 25
°
C unless otherwise specified
Test condition
I
R
= 1
μ
A (pulsed)
Pulse test V
R
= 30 V, t
p
< 300
μ
s
Pulse test t
p
< 300
μ
s,
I
F
= 1.0 mA
Pulse test t
p
< 300
μ
s,
I
F
= 200 mA,
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA, R
L
= 100
Ω
Symbol
V
(BR)
I
R
Min
30
Typ.
Max
Unit
V
μ
A
Leakage current
0.5
1
Forward voltage
V
F
320
mV
V
F
600
mV
Diode capacitance
C
D
25
30
pF
Reverse recovery time
t
rr
10
ns
Figure 1. Typical Capacitance vs. Reverse Voltage
Figure 2. Forward Current vs. Forward Voltage
0
5
10
15
20
25
0
4
8
12
16
20
24
2
8
32
36
1
8
960
V
R
- Re
v
erse
V
oltage (
V
)
C
D
f = 1 MHz
0
0.1
0.2
0.3
0.4
0.5
0.6
1
8
961
100
10
0.1
0.01
1000
1
V
F
- For
w
ard
V
oltage (
V
)
F
I
-
w
a
u
r
Figure 3. Typical Reverse Voltage vs. Reverse Current
0
0.1
5
10
15
20
25
30
35
40
45
50
1
10
100
1000
1
8
962
V
-
v
e
o
V
)
I
R
- Re
v
erse C
u
rrent (μA)
R
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