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參數(shù)資料
| 型號： | BAS40C |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面貼裝肖特基勢壘二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 64K |
| 代理商： | BAS40C |
BAS40 / A / C / S
2 of 4 2006 Won-Top Electronics
Maximum Ratings and Electrical Characteristics, Single Diode
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V
(BR)R
40
—
—
V
@ I
R
= 10μA
Forward Voltage
V
F
—
—
380
500
1000
mV
@ I
F
= 1.0mA, t
p
< 300μs
@ I
F
= 10mA, t
p
< 300μs
@ I
F
= 40mA, t
p
< 300μs
Reverse Leakage Current
I
R
—
20
200
nA
@ V
R
= 30V, t
p
< 300μs
Junction Capacitance
C
j
—
4.0
5.0
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
—
—
5.0
nS
I
= 10mA through I
= 10mA
to I
R
= 1.0mA, R
L
= 100
0.01
0.1
1
0.001
0.0001
0
1.0
0.6
0.8
0.4
0.2
I
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Voltage
T = -40oC
T = 125oC
T = 75oC
T = 25oC
T = 0oC
0
1
3
2
0
10
20
40
30
C
T
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
f = 1MHz
0
100
200
T , AMBIENT TEMPERATURE (oC)
Fig. 4 Power Derating Curve, Total Package
P
d
0
100
200
300
400
0.1
1
10
100
1000
10000
0
10
20
30
40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
I
R
T = -40oC
T = 25oC
T = 75oC
T = 125oC
T = 0oC
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