參數(shù)資料
型號： BAS386-TR3
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： SCHOTTKY DIODE MICROMELF-E2 - Tape and Reel
中文描述： Schottky (Diodes & Rectifiers) 60 Volt 200mA 500mA IFSM
文件頁數(shù)： 2/4頁
文件大?。?/td> 77K
代理商： BAS386-TR3
BAS386
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 15-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85505
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 -
Reverse Current vs. Junction Temperature
Fig. 3 -
Forward Current vs. Forward Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
Fig. 5 -
Board for R
thJA
Definition (in mm)
15827
0
50
100
150
200
250
300
350
400
450
500
25
50
75
100
125
150
T
j
- J
u
nction Temperat
u
re (°C)
P
v
e
w
e
R
- Limit
at 100 %
V
P
R
R
- Limit
at 80 %
V
P
R
R
thJA
= 540 K/W
V
R
= 50
V
1
10
100
1000
10000
25
50
75
100
125
150
15828
I
R
-
v
e
u
r
T
j
- J
u
nction Temperat
u
re (°C)
V
R
=
V
RRM
15829
0
0.5
1.0
1.5
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
T
j
= 25 °C
T
j
= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
f = 1 MHz
V
R
- Re
v
erse
V
oltage (
V
)
C
D
2
2.5
1
0.71
1.3
1.27
9
24
0.152
0.355
95 10329
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