參數(shù)資料
型號： BAS21AVD
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： High-voltage switching diodes
中文描述： 250 V, 3 ELEMENT, SILICON, SIGNAL DIODE
封裝： PLASTIC, SC-74, 6 PIN
文件頁數(shù)： 3/12頁
文件大小： 132K
代理商： BAS21AVD
BAS21AVD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 January 2011
3 of 12
NXP Semiconductors
BAS21AVD
High-voltage switching diodes
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
T
j
= 25
°
C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
Per device; one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3]
Soldering point of cathode tab.
7. Characteristics
Table 7.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per diode
V
F
forward voltage
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω
; measured at I
R
= 3 mA.
[2]
Per device; one diode loaded
P
tot
total power dissipation
T
amb
≤
25
°
C
[3]
-
250
295
150
+150
+150
mW
mW
°
C
°
C
°
C
[4]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
in free air
[1]
-
-
-
-
500
425
140
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
-
Characteristics
Conditions
Min
Typ
Max
Unit
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0 V
-
-
-
-
25
-
0.6
16
1
1.25
100
100
5
50
V
mV
nA
μ
A
pF
ns
I
R
reverse current
[1]
-
-
-
C
d
t
rr
diode capacitance
reverse recovery time
[2]
-
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