參數(shù)資料
型號(hào): BAS216
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed switching diode
中文描述: 0.25 A, 85 V, SILICON, SIGNAL DIODE
封裝: CERAMIC PACKAGE-2
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 59K
代理商: BAS216
1999 Apr 22
3
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
see Fig.5
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°
C
V
R
= 75 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
715
855
1
1.25
mV
mV
V
V
I
R
reverse current
30
1
30
50
1.5
4
nA
μ
A
μ
A
μ
A
pF
ns
C
d
t
rr
diode capacitance
reverse recovery time
V
fr
forward recovery voltage
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
200
315
K/W
K/W
note 1
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