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參數(shù)資料
| 型號(hào)： | BAS19-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | BAS19-V, BAS20-V, BAS21-V Small Signal Switching Diodes, High Voltage |
| 中文描述： | Diodes (General Purpose, Power, Switching) 120 Volt Fast Switch |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BAS19-GS08 |
BAS19, BAS20, BAS21
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85540
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode in case SOT-23, especially
suited for automatic insertion.
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Notes
(1)
Measured under pulse conditions; pulse time = t
p
0.3 ms
(2)
Device on fiberglass substrate, see layout on next page
1
2
3
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAS19
V
R
= 100 V
BAS19-E3-08 or BAS19-E3-18
BAS19-HE3-08 or BAS19-HE3-18
BAS20-E3-08 or BAS20-E3-18
BAS20-HE3-08 or BAS20-HE3-18
BAS21-E3-08 or BAS21-E3-18
BAS21-HE3-08 or BAS21-HE3-18
A8
Single diode
Tape and reel
BAS20
V
R
= 150 V
A81
Single diode
Tape and reel
BAS21
V
R
= 200 V
A82
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
VALUE
100
150
200
120
200
250
UNIT
V
V
V
V
V
V
Continuous recerse voltage
Repetitive peak reverse voltage
Non repetitive peak forward
current
Non repetitive peak forward
surge current
Maximum average forward
rectified current
(1)
DC forward current
(2)
Repetitive peak forward current
Power dissipation
(2)
t = 1 μs
I
FSM
2.5
A
t = 1 s
I
FSM
0.5
A
(av. over any 20 ms period)
I
F(AV)
200
mA
I
F
200
625
250
mA
mA
mW
I
FRM
P
tot
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS20W | Surface Mount Switching Diode |
| BAS16W | Surface Mount Switching Diode |
| BAS19W | Surface Mount Switching Diode |
| BAS21W | Surface Mount Switching Diode |
| BAS20W-7 | SURFACE MOUNT FAST SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS19H | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Diode |
| BAS19-HE3-08 | 制造商:Vishay Siliconix 功能描述:BAS19-HE3-08 - Bulk 制造商:Vishay Siliconix 功能描述:BAS19-HE3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
| BAS19-HE3-18 | 功能描述:Diode Standard 100V 200mA Surface Mount SOT-23 制造商:vishay semiconductor diodes division 系列:汽車級(jí)，AEC-Q101 包裝:帶卷（TR） 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）:200mA 不同 If 時(shí)的電壓 - 正向（Vf）:1.25V @ 200mA 速度:小信號(hào) =< 200mA（Io），任意速度 反向恢復(fù)時(shí)間（trr）:50ns 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 100V 不同?Vr，F(xiàn) 時(shí)的電容:5pF @ 0V，1MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23 工作溫度 - 結(jié):-55°C ~ 150°C 標(biāo)準(zhǔn)包裝:10,000 |
| BAS19L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Switching Diode |
| BAS19L_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Switching Diode |
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