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參數(shù)資料
| 型號： | BAS16T-7 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 中文描述： | 0.155 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SOT-523, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 200K |
| 代理商： | BAS16T-7 |
DS30260 Rev. 3 - 2
2 of 3
BAS16T, BAW56T, BAV70T, BAV99T
C
U
D
O
R
P
W
E
N
0
50
100
150
200
300
200
250
100
150
50
0
I , FORWARD CURRENT (mA)
F
Single diode loaded
Double diode loaded
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
(Note 3)
Device
BAS16T-7
BAW56T-7
BAV70T-7
BAV99T-7
Packaging
SOT-523
SOT-523
SOT-523
SOT-523
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
0.0001
10
1
0.001
0.01
0.1
0
50
100
150
200
T, JUNCTION TEMPERATURE (
°
C)
j
Fig. 3, Typical Reverse Characteristics
V = 20V
R
V = 75V
R
0.1
1000
100
10
400
600
800
1000
1200
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 2, Typical Forward Characteristics
T = +25°C
A
T = -25°C
A
T = +75°C
A
T = +125°C
A
T = +150°C
A
Notes:
http://www.diodes.com/datasheets/ap02001.pdf.1. Short duration test pulse to minimize self-heating effect.
Characteristic
Symbol
V
(BR)R
Min
85
Max
Unit
V
Test Condition
I
R
= 100
m
A
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150
°
C
V
R
= 25V, T
j
= 150
°
C
V
R
= 25V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
W
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
V
F
0.715
0.855
1.0
1.25
2.0
100
60
30
1.5
V
Leakage Current (Note 1)
I
R
m
A
m
A
m
A
nA
pF
Typical Total Capacitance
C
T
Reverse Recovery Time
t
rr
4.0
ns
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
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PDF描述 |
|---|---|
| BAV99T-7 | SURFACE MOUNT FAST SWITCHING DIODE |
| BAW56WT | 200mW Switching Diode |
| BAW56W | Dual Series Switching Diode - Silicon epitaxial planar type |
| BAW56 | Small Signal Diodes(小信號二極管) |
| BAW75 | Silicon Epitaxial Planar Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS16T-7-F | 功能描述:二極管 - 通用，功率，開關(guān) 150MW 85V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16TA | 功能描述:二極管 - 通用，功率，開關(guān) - RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16TC | 功能描述:二極管 - 通用，功率，開關(guān) - RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16TDW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Multi-Chip Diode Array |
| BAS16TDW_09 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Multi-Chip |
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