參數(shù)資料
型號(hào): BAR63V-02V-GS18
廠商: Vishay Intertechnology,Inc.
英文描述: RF PIN Diode - Single in SOD-523
中文描述: 射頻PIN二極管-超氧化物歧化酶中單523
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 153K
代理商: BAR63V-02V-GS18
BAR63V-02V
Vishay Semiconductors
Document Number 85642
Rev. 1.5, 29-Jun-05
www.vishay.com
1
16863
1
2
1
2
RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
Low forward resistance
Space saving SOD-523 package with
low series inductance
Very small reverse capacitance
Lead (Pb)-free component
Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case:
SOD-523 Plastic case
Weight:
approx. 1.6 mg
Cathode Band Color:
Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction soldering point
Part
Ordering code
Marking
Remarks
BAR63V-02V
BAR63V-02V-GS18 or BAR63V-02V-GS08
C
Tape and Reel
Test condition
Symbol
V
R
I
F
T
j
T
stg
Value
50
Unit
V
Forward current
100
mA
Junction temperature
150
°C
Storage temperature range
- 55 to + 150
°C
Test condition
Symbol
R
thJS
Value
100
Unit
K/W
e3
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