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參數(shù)資料
| 型號： | BAP70Q |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Quad PIN diode attenuator |
| 封裝： | BAP70Q<SOT753 (TSOP5)|<<http://www.nxp.com/packages/SOT753.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 292K |
| 代理商： | BAP70Q |
BAP70Q
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 6 October 2010
2 of 13
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
4. Marking
Table 3.
Type number
BAP70Q
5. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
R
reverse voltage
I
F
forward current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
single diode.
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
7. Characteristics
Table 6.
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
F
forward voltage
I
R
reverse current
C
d
diode capacitance
Marking
Marking code
A2
Limiting values
Conditions
Min
-
-
-
65
65
Max
50
100
125
+150
+150
Unit
V
mA
mW
°
C
°
C
[1]
[1]
T
sp
= 90
°
C
[1]
Thermal characteristics
Parameter
thermal resistance from junction to soldering point
Conditions
Typ
350
Unit
K/W
Characteristics
Conditions
Min Typ
Max Unit
I
F
= 50 mA
V
R
= 50 V
see
Figure 1
; f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
-
-
0.95
-
1.1
100
V
nA
-
-
-
600
430
250
-
-
300
fF
fF
fF
r
D
diode forward resistance see
Figure 2
; f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
when switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω
; measured at I
R
= 3 mA
-
-
-
-
-
77
40
5.4
1.4
1.25
100
50
7
1.9
-
Ω
Ω
Ω
Ω
μ
s
τ
L
charge carrier life time
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