參數(shù)資料
型號: BAP70-04W
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Silicon PIN diode
封裝: BAP70-04W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<Always Pb-free,;
文件頁數(shù): 2/7頁
文件大?。?/td> 47K
代理商: BAP70-04W
BAP70-04W_2
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2007
2 of 7
NXP Semiconductors
BAP70-04W
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3.
Type number
BAP70-04W
Marking codes
Marking code
1Np
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per diode
V
R
continuous reverse voltage
I
F
continuous forward current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
Min
Max
Unit
-
-
-
65
65
50
100
260
+150
+150
V
mA
mW
°
C
°
C
T
s
= 90
°
C
Table 5.
Symbol
R
th(j-s)
Thermal characteristics
Parameter
thermal resistance from junction to soldering point
Conditions
Typ
230
Unit
K/W
Table 6.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per diode
V
F
forward voltage
I
R
reverse current
C
d
diode capacitance
Characteristics
Conditions
Min
Typ
Max
Unit
I
F
= 50 mA
V
R
= 50 V
see
Figure 1
; f = 1 MHz
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
see
Figure 2
; f = 100 MHz
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
; measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
0.95
-
1.1
100
V
nA
-
-
-
600
430
250
-
-
300
fF
fF
fF
r
D
diode forward
resistance
-
-
-
-
-
77
40
5.4
1.4
1.25
100
50
7
1.9
-
μ
s
τ
L
charge carrier life time
L
S
series inductance
-
1.4
-
nH
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