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參數(shù)資料
| 型號(hào)： | BAP65-05W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP65-05W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | BAP65-05W |
BAP65-05W
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 27 September 2010
3 of 9
NXP Semiconductors
BAP65-05W
Silicon PIN diode
[1]
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
s
21
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
; measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11
0.17
0.24
0.08
0.14
0.21
0.08
0.14
0.21
0.06
0.13
0.2
0.17
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
L
charge carrier life time
L
S
series inductance
-
1.4
-
nH
Table 6.
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
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