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參數(shù)資料
| 型號： | BAP65-05 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP65-05<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | BAP65-05 |
2001 May 07
3
NXP Semiconductors
Product specification
Silicon PIN diode
BAP65-05
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
I
R
C
d
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.9
0.7
0.575
0.525
0.425
1
0.65
0.56
0.35
9.4
4.8
3.1
0.1
0.18
0.28
0.08
0.16
0.26
0.07
0.15
0.25
0.06
0.14
0.24
0.17
1.1
20
0.9
0.8
0.95
0.9
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
r
D
diode forward resistance
s
21
2
isolation
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
L
charge carrier life time
L
S
series inductance
1.4
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
220
K/W
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