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參數(shù)資料
| 型號： | BAP63-05W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP63-05W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | BAP63-05W |
2001 May 18
3
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 35 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.95
0.4
0.35
0.3
2.5
1.95
1.17
0.9
14.5
9.5
7.0
0.23
0.27
0.33
0.19
0.24
0.30
0.14
0.19
0.25
0.11
0.17
0.23
310
1.1
10
0.35
3.5
3
1.8
1.5
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
r
D
diode forward resistance
s
21
2
isolation
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
L
charge carrier life time
L
S
series inductance
1.5
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
250
K/W
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