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參數(shù)資料
| 型號(hào)： | BAP63-05W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP63-05W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 196K |
| 代理商： | BAP63-05W |
2001 May 18
4
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
GRAPHICAL DATA
handbook, halfpage
rD
(
Ω
)
1
10
1
MGW126
10
1
1
10
IF (mA)
10
2
Fig.2
Forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
(fF)
0
20
400
0
100
MGW133
200
300
4
8
12
16
VR (V)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
|
s21
|
(dB)
0
1
2
3
0.1
0.3
0.5
0.4
0.2
MGW134
f (GHz)
(1)
(3)
(2)
(4)
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
C.
Fig.4
Insertion loss (
s
21
2
) of the diode in on-state
as a function of frequency; typical values.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
handbook, halfpage
|
s21
|
2
(dB)
0
1
2
3
10
30
40
20
MGW135
f (GHz)
Fig.5
Isolation (
s
21
2
) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
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