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參數(shù)資料
| 型號(hào)： | BAP63-03 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 中文描述： | 50 V, SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, SC-76, 2 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | BAP63-03 |
2004 Feb 11
3
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-03
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
I
R
C
d
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 35 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
0.95
0.4
0.35
0.27
2.5
1.95
1.17
0.9
15.4
10.1
7.8
0.21
0.28
0.38
0.18
0.26
0.35
0.13
0.20
0.30
0.10
0.18
0.28
310
1.1
10
0.32
3.5
3
1.8
1.5
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
r
D
diode forward resistance
s
21
2
isolation
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
s
21
2
insertion loss
L
charge carrier life time
L
S
series inductance
1.5
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to soldering point
120
K/W
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